ROHM Parametric

栅极驱动器

接纳罗姆首创的微细加工手艺，开辟出片上变压器工艺。进而胜利开辟出小型、内置绝缘元件的栅极驱动器。 

轻松搜刮

 
Power Device Isolation Voltage Driving Capability(Iout) Function Operation Voltage Secondary side Miller Clamp Secondary UVLO [ON/OFF] Short Circuit
Protection (Note 2)		 DESAT (Note 2) Soft Turn OFF
after short detection		 Temp Monitor Thermal shut down
with Ext. Sensor		 Package Evaluation Kit
Simple Complex Positive Voltage Negative Voltage
Automotive
～Gen3 SiC
Drive voltage
over 18V		 3.75k
Vrms		 ±4A BM61S40RFV-C - 4.5
to
5.5V		 16
to
20V		 - Built-in 14.5V/
15.0V		 - - - - - SSOP-B10W ✔
BM61S41RFV-C 16
to
24V		 - Built-in 14.5V/
15.0V		 - - - - - SSOP-B10W ✔
SiC,
IGBT,
Si-MOSFET		 3.75k
Vrms		 ±20A - BM6112FV-C 4.5
to
5.5V		 14
to
20V		 -12
to
0V		 Ext. MOSFET 11.5V/
12.5V		 ✔ ✔ ✔ ✔ - SSOP-B28W -
2.5k
Vrms		 ±9A - BM60060FV-C 8
to
24V		 13.5
to
24V		 - Built-in 11.5V/
12.5V		 ✔ - ✔ ✔ - SSOP-B28W -
±5A - BM60055FV-C 4.5
to
30V		 9
to
24V		 - Built-in ✔
(Note 1)		 ✔ - ✔ - ✔ SSOP-B28W -
±4.5A - BM6109FV-C 4.5
to
5.5V		 14
to
18V		 - Ext.
MOSFET		 12.0V/
12.5V		 ✔ - ✔ ✔ - SSOP-B28W -
±3A - BM6101FV-C 4.5
to
5.5V		 14
to
24V		 -12
to
0V		 Ext.
MOSFET		 11.5V/
12.5V		 ✔ ✔ ✔ - ✔ SSOP-B20W -
BM6102FV-C 4.5
to
5.5V		 14
to
20V		 -  Ext.
MOSFET		 11.5V/
12.5V		 ✔ ✔ ✔ - ✔ SSOP-B20W -
BM6104FV-C 4.5
to
5.5V		 10
to
24V		 -12
to
0V		  Ext.
MOSFET		 9.05V/
9.55V		 ✔ ✔ ✔ - - SSOP-B20W -
BM60052AFV-C 4
to
32V		 10
to
20V		 -12
to
0V		 Built-in ✔
(Note 1)		 - ✔ ✔ - ✔ SSOP-B28W -
BM60054AFV-C 4
to
32V		 10
to
20V		 -12
to
0V		 Built-in ✔
(Note 1)		 ✔ ✔ ✔ - ✔ SSOP-B28W -
Si-MOSFET 3.75k
Vrms		 ±4A BM61M41RFV-C - 4.5
to
5.5V		 9
to
24V		 - Built-in 7.4V/
7.8V		 - - - - - SSOP-B10W ✔
Industry
SiC
IGBT
Si-MOSFET		 2.5k
Vrms		 ±3A - BM6108FV-LB 4.5
to
5.5V		 10
to
24V		 -12V
to
0V		 Ext.
MOSFET		 9.05V/
9.55V		 ✔ ✔ ✔ - - SSOP-B20W -
Si-MOSFET - +3.5A/
-4.5A		 - BD2320UEFJ-LA 7.5
to
14.5V		 - - - - - - - - - HTSOP-J8 -
Consumer
Si-MOSFET - ±4A BD2310G - 4.5
to
18V		 - - - - - - - - - SSOP5 -

(Note 1) OFF/ON Voltage is adjustable by external settings
(Note 2) Either of SCP and DESAT function can be used

X X

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      评价板

       

      为了确保功率器件能够或许宁静且充实阐扬机能地任务，栅极驱动器IC的挑选非常主要。
      ROHM的栅极驱动器IC评价板具备以下产物声势。
      斟酌到栅极驱动器IC评价板须要毗连到设置板上的功率器件以停止评价，以是减小了基板面积。
      单通道栅极驱动器IC的评价板除有1pcs实装品以外，还供给合用于板桥电路的2pcs实装品。
      另外 ，经由过程启用栅极驱动器IC用的Spice模子，还能够经由过程Simulation停止利用考证。

      利用案例

      开辟板上栅极驱动器IC的替代案例

      利用案例

      栅极驱动器IC评价板可用于替代开辟板上的栅极驱动器IC。
      差别封装和引脚的栅极驱动器IC很难在开辟板上停止间接替代。
      栅极驱动器IC评价板的电源、旌旗灯号输出输出端子的规划斟酌到与开辟板的布线链接，也可在评价板上利用须要调剂的栅极电阻。

      Galvanic Isolation Series [Isolation Voltage: 3.75kVrms]

      评价板 栅极驱动器IC 评价板
      EVK Name Application Gate Drive
      Voltage,
      Current      		 Gate Drive
      Channel      		 电路板
      提要      		 Board size
      [mm]      		 Parts Name IC提要 Spice
      模子      		 评价板
      利用指南      		 采办
      BM61S40RFV-EVK001 SiC MOSFET
      Gate Drive      		 16 to 20V,
      4A
      (Note 1)      		 1ch 提要 33 x 16 BM61S40RFV-C IC提要
      提要      		 Spice
      模子      		 网上代办署理店
      BM61S40RFV-EVK002 2ch 33 x 32 网上代办署理店
      BM61S41RFV-EVK001 SiC MOSFET
      Gate Drive      		 16 to 24V,
      4A      		 1ch 33 x 16 BM61S41RFV-C Spice
      模子      		 网上代办署理店
      BM61S41RFV-EVK002 2ch 33 x 32 网上代办署理店
      BM61M41RFV-EVK001 Si MOSFET
      Gate Drive      		 9 to 24V,
      4A      		 1ch 33 x 16 BM61M41RFV-C Spice
      模子      		 网上代办署理店
      BM61M41RFV-EVK002 2ch 33 x 32 网上代办署理店

      (Note 1) Max Gate Drive Voltage is protected by Over Voltage Protection

      评价板

      Galvanic Isolation Series在对应根本绝缘的利用方面具有单通道驱动产物，和能够利用在板桥电路上的双通道驱动产物。

      1ch Galvanic Isolation Gate Driver Board (1pcs)

      利用指南
      利用案例

      相干产物

      2ch Galvanic Isolation Gate Driver Board (2pcs)

      利用指南
      利用案例

      相干产物

      栅极驱动器IC

      Small footprint for 8mm creepage distance

      1ch 栅极驱动器
      • 1ch栅极驱动器
      • Small Package: 3.5mm x 10.2mm x 1.9mm
      • 根本绝缘
      • Miller Clamp　内置电路
      • I/O Delay time: 65ns (Max)
      • 经由过程双输出旌旗灯号（INA、INB）完成伴有输出逻辑节制、内部乐音的栅极“H”输出避免设想
      • 输出旌旗灯号电压(Note 2)：　VINH:2.0 V　or over　/ VINL : 0.8V or under

      (Note 2) 旌旗灯号输出侧的电源电压规模（VCC1）是与输出旌旗灯号有关的4.5~5.5V。

      Truth table

      INA
      (input)      		 INB
      (input)      		 OUT
      (Output)
      L H L
      H L H
      L L L
      H H L
      测定图

      1200V High Voltage High and Low Side Driver

      评价板 栅极驱动器IC 评价板
      EVK Name Application Gate Drive
      Voltage,
      Current      		 Miller Clamp 电路板
      提要      		 Board size
      [mm]      		 Parts Name IC提要 Spice
      模子      		 评价板
      利用指南      		 采办
      BM60212FV-EVK001 IGBT Gate Drive
      Si MOSFET Gate Drive      		 10 to 24V,
      3A
      (Note 3)      		 Built-in 提要 33 x 21 BM60212FV-C IC提要
      提要      		 - 网上
      代办署理店
      BM60213FV-EVK001 - BM60213FV-C - 网上
      代办署理店

      (Note 3) Power supply voltage is from 10 to 24V relative to low-side and input-side ground.

      评价板

      仅需与利用链接，便可简略替代。

      利用指南
      利用案例

      相干产物

      栅极驱动器IC

      栅极驱动器
      • Turn on/off time: 75ns (Max)
      • 经由过程三输出旌旗灯号（EN、INA、INB）完成输出逻辑节制。经由过程内部乐音完成高侧、低侧同时ON避免设想
      • Package: 6.50mm x 8.10mm x 2.01mm
      • Miller Clamp内置电路 [仅BM60212FV-C]
      • 输出旌旗灯号电压(Note 4)：　VINH : 2.0 V or over　/ VINL : 0.8V or under
      • Gate Drive Voltage：10 to 24V
      • Gate Drive Current：3A

      (Note 4) 电源电压规模（VCCB）10~24V。

      Truth table

      ENA
      (input)      		 INA
      (input)      		 INB
      (input)      		 OUTA
      (output)      		 OUTB
      (output)
      L X X L L
      H L L L L
      H L H L H
      H H L H L
      H H H L L
      测定图

      Power Device Lineup